California NanoSystems Institute
CNSI
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Russel Caflisch, Ph.D.

   
Professor, Mathematics, Materials Science and Engineering
Member, NanoElectronics, Photonics, Architectonics, NanoMechanical and Nanofluidic Systems, California NanoSystems Institute

Education:
Degrees:
Ph.D., New York University, 1978

Honors and Awards:
2006 International Congrees of Math, Invited Speaker
2006 European Consortium for Math, Plenary Speaker

Professional Societies:
Materials Research Society
American Mathematical Society
Society for Industrial and Applied Mathematics
American Physical Society

Contact Information:
Email Address: caflisch@math.ucla.edu
Work Email Address: caflisch@math.ucla.edu
Mailing Address: Mail Code: 155505
Los Angeles, CA 90095
UNITED STATES
Work Address: UCLA
Department of Mathematics
Box 951555
Los Angeles, CA 90095
UNITED STATES
Home Page: http://www.math.ucla.edu/~caflisch/
Fax Number: (310) 206-2679
Office Phone Number: (310) 825-4701
Work Phone Number: (310) 825-9036 Assistant's phone number
310-206-0200
310-983-3297
Research Interests:

Our group consists of applied mathematicians and material scientists working on modeling, analysis and simulation for materials systems with nanoscale structures. The materials problems include both materials growth and device properties. Some examples are the following: surface morphology in growth of epitaxial thin films for quantum well systems (Fig.1), strain effects in heteroepitaxial growth (Fig. 2), microscopic structure of step edges, and electronic structure for design of quantum systems (Fig. 3). Mathematical methods include ab initio (DFT) computations, kinetic Monte Carlo simulations, level set computations for island dynamics, rate equations and bulk models.


Technical Research Interest:

Professor Caflisch and his research group work on modeling, analysis and simulation for applications in nanotechnology, materials science, fluid mechanics and other fields. Specific projects include (1) Stranski-Krastonov growth of self-assembly and directed self-assembly of quantum dots, (2) design and optimization of material structures for quantum computing devices, (3) stability and structure of strained nanoscale crystals and wires, (4) singularity formation in incompressible flow, (5) hybrid numerical methods for plasma dynamics, and (6) simulation and optimal design of plasmon waveguides and electrodeposition shapes. This work often requires development of new numerical methods and analysis of the mathematical properties of models from materials physics, including multiscale and stochastic methods. Numerical methods developed by this group include a level set method for epitaxial growth, a multiscale method for atomistic strain, and accelerated Monte Carlo methods for integration and optimization. The research group is multidisciplinary, including mathematics, physics and material science. The group collaborates with researchers in industry, government labs and academia from many different disciplines.


Additional Information:

Russel Caflisch received his PhD in Mathematics from the Courant Institute of Mathematical Sciences at New York University in 1978. After a year-long postdoc position at Courant, he was an Assistant Professor at Stanford, before heading back to Courant. At Courant, he received tenure in 1984 and was promoted to Professor in 1988. He moved to LA in 1989 to work at UCLA. Before he worked in nanoscale systems, Russel worked on a wide range of topics in applied mathematics, including kinetic theory of rarefied gas dynamics, multiphase fluid flows, vortical flows, singularity theory for fluid flows and PDEs, quasi-Monte Carlo methods, and computational finance. Currently, he leads a group of applied mathematicians and materials physicists working on modeling and simulation for epitaxial growth and device properties. Multi-scale analysis, combining models and simulation methods at different length scales from the atomistic to the continuum, is a hallmark of this group's efforts. Much of this work is in collaboration with HRL Laboratories in Malibu. Russel was awarded a Hertz Foundation Graduate Fellowship and a Sloan Foundation Research Fellowship.

Selected Publications:

Yi Sun, Russel Caflisch, and Bjorn Engquist, A Multiscale Method for Epitaxial Growth, Multiscale Modeling & Simulation, 2011, 9 (1), 335-354.
Cohen, B.I.; Dimits, A.M.; Friedman, A.; Caflisch, R.E.; , Time-Step Considerations in Particle Simulation Algorithms for Coulomb Collisions in Plasmas, IEEE Transactions on Plasma Science, 2010, 38 (9), 2394-406.
Siegel M, Caflisch RE, Calculation of complex singular solutions to the 3D incompressible Euler equations, Physica D: Nonlinear Phenomena, 2009, 238 (23-24), 2368-2379.
Reich JM, Niu XB, Lee YJ, Caflisch RE, Ratsch C, Lateral alloy segregation in thin heteroepitaxial films, PHYSICAL REVIEW B, 2009, 79 (7), 073405-1-4.
Pradeep Thiyanaratnam, Russel Caflisch, Paulo S. Motta, and Jack W. Judy, Modeling, Simulation, and Design for a Customizable Electrodeposition Process, J. on Applied Mathematics, 2009, 69 (4), 1043-64.
Wang, C. M. Hyman, J. D. Percus, A. Caflisch, R., Parallel Tempering for the Traveling Salesman Problem, International Journal of Modern Physics C, 2009, 20 (4), 539-556.
Dimits AM, Wang CM, Caffisch R, Cohen BI, Huang YH, Understanding the accuracy of Nanbu's numerical Coulomb collision operator, Journal of Computational Physics, 2009, 228 (13), 4881-92.
Margetis, D; Caflisch, RE , Anisotropic step stiffness from a kinetic model of epitaxial growth, MULTISCALE MODELING & SIMULATION , 2008, 7 (1), 242-273.
Russel E. Caflisch , Growth, Structure and Pattern Formation for Thin Films, Journal of Scientific Computing, 2008, 37 (1), 3-17.
Lombardo, Maria Carmela, Caflisch, Russel E, Sammartino, Marco, Non-local scattering kernel and the hydrodynamic limit, Journal of Statistical Physics, 2008, 130 (1), 69-82.
Niu, XB; Lee, YJ; Caflisch, RE; Ratsch, C , Optimal capping layer thickness for stacked quantum dots, Physical Review Letters, 2008, 101 (8).
Wang CM, Lin TY, Caflisch R, Cohen BI, Dimits AM, Particle simulation of coulomb collisions: Comparing the methods of Takizuka & Abe and nanbu, Journal of Computational Physics , 2008, 227 (9), 4308-4329.
Youri Bae and R.E. Caflisch, Strain in Layered Nanocrystals, Euro. Jnl of Applied Mathematics, 2007, 18, 571–582.
R.E. Caflisch, Y.-J. Lee, S. Shu, Y. Xiao and Jinchao Xu, An application of multigrid methods for a discrete elastic model for epitaxial systems, Journal of Computational Physics, 2006, 219 (2), 697-714.
Lee, Sunmi, Caflisch, Russel E, Lee, Young-Ju, Exact artificial boundary conditions for continuum and discrete elasticity , SIAM Journal on Applied Mathematics, 2006, 66 (5), 1749-1775.
X. Niu, R. Vardavas, R.C. Caflisch and C. Ratsch, Level set simulation of directed self-assembly during epitaxial growth, Physical Review B, 2006, 74 (19), 193403-193407.
R.E. Caflisch, Multiscale Modeling for Epitaxial Growth, Porc. Intl. Congress Math, 2006, 3, 1419-1432.
C. Connell, R.E. Caflisch, E. Luo and G. Simms, The Elastic Field of a Surface Step: The Marchenko-Parshin Formula in the Linear Case, Journal of Computational and Applied Mathematics , 2006, 196 (2), 368-386.
Zhao ZM, Yoon TS, Feng W, Li BY, Kim JH, Liu J, Hulko O, Xie YH, Kim HM, Kim KB, Kim HJ, Wang KL, Ratsch C, Caflisch R, Ryu DY and Russell TP , The challenges in guided self-assembly of Ge and InAs quantum dots on Si Proceedings of the Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4) - ICSI-4, Thin Solid Films, 2006, 508 (1-2), 195-199.
Rosen G, Caflisch R, Dumett M, Kuhlman J, Tempelman L, Wang C, Swift R, Mathematical models for the phamacokinetics and transport of transdermal alcohol, Alcoholism-Clinical and Experimental Research (opens pdf, scroll down to pg 85A to view), 2005, 29 (s1), 85A-85A.
R. E. Caflisch, C. Anderson, M. Gyure, H. Robinson and E. Yablonovitch, Modeling, Design and Optimization of a Solid State Qubit, SIAM Journal on Applied Mathematics, 2005, 65 (4), 1285-1304.
C. Ratsch, J. Garcia and R.E. Caflisch, The influence of edge diffusion on the growth mode on vicinal surfaces, Applied Physics Letters, 2005, 87 (14), 141901-141904.
R.E. Caflisch and M. Siegel, A Semi-Analytic Approach to Euler Singularities, Methods and Applications of Analysis, 2004, 11 (3), 423-430.
M. Siegel, R.E. Caflisch and S. Howison, Global existence, singular solutions and ill-posedness for the Muskat problem, Communications on Pure and Applied Mathematics, 2004, 57 (10), 1374 - 1411.
R.E. Caflisch and S. Chaudhary, Monte Carlo Simulation for American Options, A Celebration of Mathematical Modeling : The Joseph B. Keller Anniversary Volume D, 2004 (Givoli, M. J. Grote and G. C. Papanicolaou, eds.).
R. Vardavas, C. Ratsch and R.E. Caflisch, Submonolayer growth in the presence of defect sites, Surface Science, 2004, 569 (1-3), 185-192.
I. A. Fedorov, K. W. Kim, R. E. Caflisch and E. Yablonovitch , A scalable quantum gate design for quantum computation, J. Appl. Phys, 2003.
Caflisch, R.E., Li, Bo. , ANALYSIS OF ISLAND DYNAMICS IN EPITAXIAL GROWTH OF THIN FILMS, Multiscale Model. Simul. , 2003, 1 (1), 150-171.
F. Gibou, C. Ratsch, and R.E. Caflisch, Capture Numbers in Rate Equations for Epitaxial Growth and Scaling Laws, Physical Review B, 2003, 67 (15).
Ratsch C, Anderson C, Caflisch RE, Feigenbaum L, Shaevitz D, Sheffler M, Tiee C, Multiple domain dynamics simulated with coupled level sets, Applied Mathematics Letters, 2003, 16, 1165-1170.
A.C. Schindler, M. F. Gyure, D. D. Vvedensky, R. E. Caflisch, C. Connell and G. D. Simms, Theory of Strain Relaxation in Heteroepitaxial Systems, Phys. Rev. B , 2003, 67 (7), 75316-75330.
F. Gibou, R. Fedkiw, R.E. Caflisch and S.J. Osher, A level set approach for the numerical simulation of dendritic growth, J. Scientific Comp, 2002, 19 (1-3), 183-199.
R. Caflisch, Managing Editor: M. Hazewinkel Kluwer Academic Publishers, Birkhoff-Rott Equation, Supplement III. Encyclopaedia of Mathematics, 2002, 71-72.
C. Ratsch, M.F. Gyure, R.E. Caflisch, F. Gibou, M. Petersen, M. Kang, J. Garcia and D.D. Vvedensky, Level-set method for island dynamics in epitaxial growth, Phys. Rev. B, 2002, 65 (19), 697-709.