California NanoSystems Institute
Text Size: A A A A

Kang Wang, Ph.D.

Raytheon Chair Professor, Physical Electronics
Director, WIN, FENA
Associate Director, California NanoSystems Institute
Professor of Engineering, UCLA, Electrical Engineering

Ph.D., M.I.T., 1970

Honors and Awards:
Tsinghua University and Nanjing University, China, Honorary Professor
Politechnico University, Torino, Italy, Guest University Professor and Honoris Causa
IEEE, Fellow
2004 TSMC, Honor Lectureship
2003 FENA Focus Center, Director
1999 European Material Research Society, Best Paper
1996 Semiconductor Research Corporation, Inventor Awards
1989 Semiconductor Research Corporation, Inventer Awards

Professional Societies:
Editorial Board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific Publishers)
American Physical Society American Vacuum Society
Handbook of Semiconductor Nanostructures and Nanodevices, Editor
International Symposium on Silicon Molecular Beam Epitaxy
Eta Kappa Nu Member

Contact Information:
Email Address:
Work Address: UCLA
Department of Electrical Engineering
Box 951594
Los Angeles, CA 90095
ARR Papers:
Home Page:
Fax Number: (310) 206-4685
Work Phone Number: (310) 825-1609
Research Interests:

Professor Wang's research focuses on nanoscience and nanotechnology, nanoelectronics and nanophotonics, MBE, self assembly of quantum dots and other materials, and quantum structures. Devices of interest: nanowires and nanodot CMOS, detector, spintronics micro-wave and millimeter electronics/optoelectronics, and quantum computing as well as new Nanoarchitecture for new information processing and nanosystems.

Technical Research Interest:

Dr. Wang's interest in nanoscience technology include self-assembly of quantum dots, nano-fabrication technology for nanoelectronics, photonics and sensors applications. He is a leader in Nanotechnology. In nanoelectronics, he studies the power dissipation of electronic and spintronic devices and the use of these devices for information processing. His prior work leads to the use of strained SiGe in CMSO and in optoelectronics such as integrated Ge and infrared detectors. He was the founding director of Nanoelectronics Research Facility at UCLA (established in 1989) with the infrastructure to further research in nanotechnology, which led to the recent establishment of California NanoSystems Institute, funded by the State of California, the first of its kind in the nation. He leads the MARCO Center on FENA to address the issues and opportunities for nanoelectronics devices and their implementation in information processing from the fundamental atomic and molecular level. The Center currently has over 30 investigators from 12 leading universities in the nation.

Additional Information:

Kang L. Wang received the B.S.E.E. from the National Cheng Kung University, Taiwan, in 1964. He earned both the M.S.E.E. and the Ph.D. in electrical engineering from M.I.T., in 1966 and 1970, respectively.

Prof. Wang has been with the Electrical Engineering Department at UCLA since 1979. He was Chair of the department from 1993 to 1996. He is a Fellow of the IEEE, and a member of the American Physical Society, the Materials Research Society, the Eta Kappa Nu Society, the Sigma Xi Society and the Phi Tau Phi Honor Society.

Prof. Wang has recieved awards which include the Semiconductor Research Corporation Inventor Award (consecutively from 1989 through 1994, and again from 1996 through 1998). In 1995 he was also honored with the Semiconductor Research Corporations Technical Excellence Award and the Best Paper Award from the European Material Research Society. His other honors include the J.H. Ahlers Achievement Award and the Guggenheim Fellow Award from the Max Planck Institute in Stuttgart, Germany. He has chaired many international conferences and symposia.

Selected Publications:

Zhongming Zeng, Pedram Khalili Amiri, Ilya N. Krivorotov, Hui Zhao, Giovanni Finocchio, Jian-Ping Wang, Jordan A. Katine, Yiming Huai, Juergen Langer, Kosmas Galatsis, Kang L. Wang, and HongWen Jiang, High-Power Coherent Microwave Emission from Magnetic Tunnel Junction Nano-oscillators with Perpendicular Anisotropy, ACS Nano, 2012, 30, A-G.
Kim J, Hong AJ, Kim SM, Shin KS, Song EB, Hwang Y, Xiu F, Galatsis K, Chui CO, Candler RN, Choi S, Moon JT, Wang KL, A stacked memory device on logic 3D technology for ultra-high-density data storage, Nanotechnology, 2011, 22 (25), 254006.
Liao Y, Zhang C, Zhang Y, Strong V, Tang J, Li XG, Kalantar-Zadeh K, Hoek EM, Wang KL, Kaner RB, Carbon nanotube/polyaniline composite nanofibers: facile synthesis and chemosensors, Nano Lett, 2011, 11 (3), 954-9.
Rasool HI, Song EB, Allen MJ, Wassei JK, Kaner RB, Wang KL, Weiller BH, Gimzewski JK, Continuity of graphene on polycrystalline copper, Nano Lett, 2011, 11 (1), 251-6.
Xu G, Torres CM, Tang J, Bai J, Song EB, Huang Y, Duan X, Zhang Y, Wang KL, Edge effect on resistance scaling rules in graphene nanostructures, Nano Lett, 2011, 11 (3), 1082-6.
Wang Y, Sun C, Yan X, Xiu F, Wang L, Smith SC, Wang KL, Lu GQ, Zou J, Lattice distortion oriented angular self-assembly of monolayer titania sheets, J Am Chem Soc, 2011, 133 (4), 695-7.
Xiu F, He L, Wang Y, Cheng L, Chang LT, Lang M, Huang G, Kou X, Zhou Y, Jiang X, Chen Z, Zou J, Shailos A, Wang KL, Manipulating surface states in topological insulator nanoribbons, Nat Nanotechnol, 2011, 6 (4), 216-21.
Dong A, Chen J, Oh SJ, Koh WK, Xiu F, Ye X, Ko DK, Wang KL, Kagan CR, Murray CB, Multiscale periodic assembly of striped nanocrystal superlattice films on a liquid surface, Nano Lett, 2011, 11 (2), 841-6.
Guangyu Xu, Carlos M. Torres, Jr., Yuegang Zhang, Fei Liu, Emil B. Song, Minsheng Wang, Yi Zhou, Caifu Zeng and Kang L. Wang, Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene, Nano Lett, 2010, 10 (9), 3312-7.
Xiu F, Wang Y, Kim J, Hong A, Tang J, Jacob AP, Zou J, Wang KL., Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots, Nat Mater. , 2010, 9 (4), 337-44.
Guangyu Xu, Carlos M. Torres, Jr., Emil B. Song, Jianshi Tang, Jingwei Bai, Xiangfeng Duan, Yuegang Zhang, and Kang L. Wang, Enhanced Conductance Fluctuation by Quantum Confinement Effect in Graphene Nanoribbons, Nano Lett, 2010, 10 (11), 4590-4.
Kabehie S, Xue M, Stieg AZ, Liong M, Wang KL, Zink JI, Heteroleptic copper switches, J Am Chem Soc, 2010, 132 (45), 15987-96.
Lei Liao, Yung-Chen Lin, Mingqiang Bao, Rui Cheng, Jingwei Bai, Yuan Liu, Yongquan Qu, Kang L. Wang, Yu Huang, & Xiangfeng Duan, High-speed graphene transistors with a self-aligned nanowire gate, Nature, 2010, 467, 305-8.
Hong AJ, Liu CC, Wang Y, Kim J, Xiu F, Ji S, Zou J, Nealey PF, Wang KL., Metal nanodot memory by self-assembled block copolymer lift-off, Nano Lett, 2010, 10 (1), 224-9..
Xiu F, Wang Y, Wong K, Zhou Y, Kou X, Zou J, Wang KL, MnGe magnetic nanocolumns and nanowells, Nanotechnology, 2010, 21 (25), 255602.
Liu W, Xiu F, Sun K, Xie YH, Wang KL, Wang Y, Zou J, Yang Z, Liu J., Na-doped p-type ZnO microwires, J Am Chem Soc. , 2010, 132 (8), 2498-9.
Galatsis K, Wang KL, Ozkan M, Ozkan CS, Huang Y, Chang JP, Monbouquette HG, Chen Y, Nealey P, Botros Y., Patterning and templating for nanoelectronics, Adv Mater, 2010, 22 (6), 769-78.
Xiu F, Wang Y, Kim J, Upadhyaya P, Zhou Y, Kou X, Han W, Kawakami RK, Zou J, Wang KL, Room-temperature electric-field controlled ferromagnetism in Mn0.05Ge0.95 quantum dots, ACS Nano, 2010, 4 (8), 4948-54.
Tang J, Wang CY, Xiu F, Hong AJ, Chen S, Wang M, Zeng C, Yang HJ, Tuan HY, Tsai CJ, Chen LJ, Wang KL, Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors, Nanotechnology, 2010, 21 (50), 505704.
He J, Wu Y, Wang KL, Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer, Nanotechnology, 2010, 21 (25), 255705.
Xiu F, Wang Y, Kou X, Upadhyaya P, Zhou Y, Zou J, Wang KL, Synthesis of high-Curie-temperature Fe0.02Ge0.98 quantum dots, J Am Chem Soc, 2010, 132 (33), 11425-7.
Kalantar-zadeh K, Tang J, Wang M, Wang KL, Shailos A, Galatsis K, Kojima R, Strong V, Lech A, Wlodarski W, Kaner RB, Synthesis of nanometre-thick MoO3 sheets, Nanoscale, 2010, 2 (3), 429-33.
Jingwei Bai, Rui Cheng, Faxian Xiu, Lei Liao, Minsheng Wang, Alexandros Shailos, Kang L. Wang, Yu Huang and Xiangfeng Duan, Very large magnetoresistance in graphene nanoribbons, Nature Nanotechnology, 2010, 5, 655-9.
Xiu F, Ovchinnikov IV, Upadhyaya P, Wong K, Kou X, Zhou Y, Wang KL, Voltage-controlled ferromagnetic order in MnGe quantum dots, Nanotechnology, 2010, 21 (37), 375606.
Allen MJ, Wang M, Jannuzzi SA, Yang Y, Wang KL, Kaner RB., Chemically induced folding of single and bilayer graphene, Chem Commun (Camb). , 2009, 41, 6285-7.
Woo RL, Gao L, Goel N, Hudait MK, Wang KL, Kodambaka S, Hicks RF., Kinetic control of self-catalyzed indium phosphide nanowires, nanocones, and nanopillars, Nano Lett, 2009, 9 (6), 2207-11.
Zhou, Y., Ogawa, M., Han, X. and Wang, K.L., Alleviation of Fermi level pinning effect on metal/Germanium interface by insertion of an ultra thin aluminum oxide, Applied Physics Letters, 2008, 93 (20), 202105.
Yim, H.I., Lee, S.I., Hwang, J.Y., Rhee, J.R., Chun, B.S., Wang, K.L., Kim, Y.K., Kim, T. W., Lee, S.S. and Hwang, D.G., Bias voltage dependence of magnetic tunnel junctions comprising amourphous ferromagnetic CoFeSiB layer with double barriers, Physica Status Solidi , 2008, 205 (8), 1847 – 1850.
Bao, M., Khitun, A., Wu, Y., Lee, J.-Y., Wang, K.L., and Jacob, A., Coplanar waveguide radio frequency ferromagnetic parametric amplifier, Applied Physics Letters, 2008, 93 (7), 072509.
Bao, M., Wong, K., Khitun, A., Lee, J.Y., Hao, Z., Wang, K.L., Lee, D.W. and Wang, S. X., Determining wave vector and material property from the phase-shift of spin wave propagation, Europhysics Letters , 2008, 84, 27009-p1-27009-p4.
Zhao, Z., Yadavalli, K., Hao, Z., and Wang, K.L., Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy, Nanotechnology, 2008, 20 (3), 035304-1 - 035304-7.
Yang, J.Y., Kim, J.H., Lee, J.S., Kim, H.J., Wang, K.L. and Hong, J.P., Electrostatic force microscopy measurements of charge trapping behavior of Au nanoparticles embedded in metal-insulator-semiconductor structure, Ultramicroscopy, 2008, 108 (10), 1215 – 1219 .
He, J., Yadavalli, K., Zhao, Z., Li, N., Hao, Z., Wang, K.L. and Jacob, A, InAs/GaAs nanostructures grown on patterened Si (001) by molecular beam epitaxy, Nanotechnology, 2008, 19, 455607.
Khitun, A., Bao, M., Lee, J.Y., Wang, K.L., Lee, D.W., and Wang, S., Inductively Coupled Circuits with Spin Wave Bus for Information Processing, Journal of Nanoelectronics and Optoelectronics, 2008, 3 (1), 24-34.
Xu, G., Liu, F., Han, S., Ryu, K. Badmaev, A., Lei, B., Zhou, C., and Wang, K.L., Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors, Applied Physics Letters, 2008, 92 (22), 223114 .
Wang, Y., Zou, J., Zhao, Z., Han, X., Zhou, X., Wang, K.L., Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si, Journal of Applied Physics, 2008, 103 (6), 661041 – 661043.
Ogawa, M., Han, X., Zhao, Z., Wang, Y., Wang, K.L. and Zhou, J., Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrate, Journal of Crystal Growth, 2008, 311 (7), 2147 – 2150 .
Wang, K.L., Galatsis, K., Ostroumov, R., Khitun, A., Zhao, Z., and Han, S., Nanoarchitectonics for Heterogeneous Integrated Nanosystems, Proceedings of IEEE, 2008, 96 (2), 212 – 229 .
Song, C.,Bergstrom, R.,Ramunno-Johnson, D.,Jiang, H., Paterson,D., de Jonge, M.D.,McNulty, I.,Lee, J.,Wang, K.L., and Miao, J., Nanoscale Imaging of Buried Structures with Elemental SUsing Resonant X-Rapecificity y Diffraction Microscopy, Physical Review Letters, 2008, 100 (2), 025504-1 - 025504-4 .
Changyong Song, Raymond Bergstrom, Damien Ramunno-Johnson, Huaidong Jiang, David Paterson, Martin D. de Jonge, Ian McNulty, Jooyoung Lee, Kang L. Wang, and Jianwei Miao, Nanoscale Imaging of Buried Structures with Elemental Specificity Using Resonant X-Ray, Physical Review Letters, 2008, 100 (2), 025504.
Zhao, Z., Hao, Z., Yadavalli, K., Wang, K.L., and Jacob, A., Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer, Applied Physics Letters, 2008, 92 (8), 0831111 – 0831113 .
Liu, C., Hughes, T., Qi, X.L., Wang, K.L., and Zhang, S.C., Quantum spin hall effect in inverted Type-II semiconductors, Physical Review Letters, 2008, 100 (23), 2366011 – 2366014.
Hong, A., Ogawa, M., Wang, K.L., Wang, Y., Zou, J., Xu, Z., and Yang, Y., Room temperature Si-growth on Ge incorporating high-K dielectric for metal oxide semiconductor applications, Applied Physics Letters, 2008, 93 (2), 0253501.
Van der Muelen, M., Petkov, N., Morris, M., Kazakova, O., Han, X., Wang, K.L., Jacob, A. and Holmes, J., Single Crystalline Ge1-XMnX Nanowires as Building Blocks for Nanoelectronics, Nano Letters, 2008, 9 (1), 50 – 56.
Kumar, M.J., Reed, M.A., Amaratunga, G., Cohen, G.M. Janes, D.B., Lieber, C.M., Meyyappan, M., Wernersson, L.-E., Wang, K.L., Chau, R.S., Kamins, T.I., Lundstrom, M., Bin Yu and Zhou, C., Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology, IEEE Transactions on Electron Devices, 2008, 55 (11), 2813-2819 .
Khitun, A., Bao, M and Wang, K.L., Spin wave magnetic nanofabric: A new approach to spin-based logic circuitry, IEEE Transactions on Magnetics, 2008, 44 (9), 2141-2152.
Wang, K.L., Zhao, Z and Khitun, A., Spintronics for nanoelectronics and nanosystems, Thin Solid Films, 2008, 517 (1), 184 – 190.
Ovchinnikov, I., and Wang, K.L., Variability of electronics and spintronics nanoscale devices, Applied Physics Letters, 2008, 92 (9), 0935031 – 09350314.
Ovchinnikov, Igor V.; Wang, Kang L., Voltage-controlled surface magnetization of itinerant ferromagnet Ni1-XCuX, Physical Review B, 2008, 78 (1), 012405.
Gilje, S., Han, S., Wang, M., Wang, K.L., Kaner, R., A Chemical Route to Graphene for Device Applications, Nano Letters , 2007, 7 (11), 3394 – 3398.
Galatsis, K., Potok, R., and Wang, K.L., A Review of Metrology for Nanoelectronics, IEEE Transactions on Semiconductor Manufacturing, 2007, 20 (4), 542 – 548 .
Liu, F. and Wang, K.L. , Correlated random telegraph signal and low-frequency noise in carbon nanotube transistors, Nano Letters, 2007, 8 (1), 147 – 151.
Ogawa, M., Cha, D., Lee, J.Y., Wang, K.L. , Dosage dependence of Ge quantum dots grown on carbon-implanted Si substrates, Journal of Crystal Growth, 2007 (301-302), 766 – 770.
Jeon, H.C., Shon, Y., Kim, H.S., Li, M.K., Lee, S.J.,, Kang, T. W., Jung, J.H., Kim, T.W., Kim, H.S., Kim, M.D., Wang, K.L. and Lee, J.J., Effect of thermal annealing on the magnetic and the optical properties of (Ga1-xMnx)N think films grown on GaN buffer layers, Journal of the Korean Physical Society, 2007, 50 (6), 1921 – 1924.
Khitun, A., Nikonov, D.E., Bao, M., Galatsis, K., and Wang, K.L., Efficiency of Spin-Wave Bus for Information Transmission, IEEE Transactions on Electron Devices, 2007, 54 (12), 3418 – 3421.
Singh, K., Martinez, A., Jing, X., Ozkan, M., Ozkan, C., Liu, F. and Wang, K.L., Electrical Characterization and Analysis of Carbon Nanotube-Peptide Nucleic Acid Conjugates, Journal of Nanoelectronics and Optoelectronics, 2007, 2 (2), 205 – 208.
Chen, J., Wang, K.L., and Galatsis, K., Electrical Field Control Magnetic Phase Transition in Nanostructured MnxGe1-x, Applied Physics Letters, 2007, 90, 01250-1 – 01250-3.
Eshaghian-Wilner, M.M,. Friesz, A., Khitun, A., Navab, S., Parker, A.C., Wang, K.L. and Chongwu Z., Emulation of neural networks on a nanoscale architecture, Journal of Physics: Conference Series, 2007, 61 (1), 288-92.
Khitun, A., Nikonov, D., Bao, M., Galatsis, K. and Wang, K.L., Feasibility study of logic circuits with spin wave bus, Nanotechnology, 2007, 18, 465202 – 1-9.
Lee, J., Wang, K.L., Chen, H.-T., and Chen, L.-J., High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterning, Journal of Crystal Growth, 2007, 301, 330–334.
Yu, X., Wang, K.L., Zheng, X., and Zhang, H., Incoherent photonic digital-to-analogue converter based on broadband optical source, IEEE Electronics Letters, 2007, 43 (19), 52 – 53.
Cha, D., Ogawa, M., Chen, C., Kim, Seongku, Lee, J.Y., and Wang, K., Intersubband absorption in p-type Si1-xGex quantum dots on pre-patterned Si substrates made by diblock copolymer process, Journal of Crystal Growth, 2007, 766 (301-302), 833 – 836 .
Hoang, J., Van, T.T., Sawkar-Mathur, M., Hoex, B., Van de Sanden, M.C.M., Kessels, W.M.M., Ostroumov, R., Wang, K.L., Bargar, J.R., and Chang, J.P., Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition, Journal of Applied Physics, 2007, 101 (12), 1231161 – 1231168.
Cheng, S.F., Gao, L., Woo, R.L., Pangan, A., Malouf, G., Goorsky, M.S., Wang, K.L. and Hicks, R.F., Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon, Journal of Crystal Growth, 2007, 310 (3), 562 – 569.
Eshaghian-Wilner, M.M., Khitun, A., Navab, S. and Wang, K.L., The Spin-Wave Nanoscale Reconfigurable Mesh and the Labeling Problem, ACM Journal on Emerging Technologies in Computing Systems, 2007, 3 (2).
Bao, M., and Wang, K.L., Accurately Measuring Current-voltage Characteristics of Tunnel Diodes, IEEE Transaction on Electron Devices, 2006, 53 (10), 2564 – 2568 .
Liu, W.L., Chen, Y.L., Balandin, A.A., and Wang, K.L., Capacitance-voltage spectroscopy of trapping states in GaN/AlGaN heterostructure field-effect transistors, Journal of Nanoelectronics and Optoelectronics, 2006, 1 (2), 258 – 263.
Wang, X., Liu, F., Senthil Andavan, G.T., Jing, X., Singh, K., Yazdanpanah, V.R., Bruque, N., Pandey, R.R., Lake, R., Ozkan, M., Wang, K.L., and Ozkan, C.S., Carbon Nanotube-DNA Nanoarchitectures and Electronic Functionality, Small, 2006, 2 (11), 1356 – 1365.
Liu, F., Bao, M., Wang, K.L., Zhang, D., and Zhou, C., Coulomb attractive random telegraph signal in a single-walled carbon nanotube, PHYSICAL REVIEW B, 2006, 74 (3), 35438-1 – 35438-5 .
Singh, K.V., Pandey, R.R., Wang, X., Lake, R., Ozkan, C.S., Wang, K.L., and Ozkan, M., Covalent Functionalization of Single Walled Carbon Nanotubes with Peptide Nucleic Acid: Nanocomponents for Molecular Level electronics, Carbon, 2006, 44 (9), 1730 – 1739 .
Galatsis, K., Wang, K.L., Botros, Y., Yang, Y., Xie, Y.H., Stoddart, J.F., Kaner, R.B., Ozkan, C., Liu, J., Ozkan, M., Zhou, C., and Kim, K.W., Emerging memory devices, Circuits and Devices Magazine, 2006, 22 (3), 12 – 21.
Yang, Z., Liu, J.-L., Shi, Y., Zheng, Y.-D., and Wang, K.L., Folded acoustic phonon modes in Ge/Si quantum dot superlattices with different periods, Journal of Nanoelectronics and Optoelectronics, 2006, 1 (1), 86 – 91 .
Wang, X., Liu, F., Wang, K.L., and Ozkan, C.S., Metallized DNA Nanotemplates for the Fabrication of ZnO Nanostructures for Optoelectronic Applications, Journal of Nanoelectronics and Optoelectronics, 2006, 1 (2), 203 – 210.
Van, T.T., Hoang, J., Ostroumov, R., Wang, K.L., Bargar, J.R., Lu, J., Blom, H.-O., and Chang, J.P., Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits, Journal of Applied Physics, 2006, 100 (7), 073512-1 – 073512-7.
Liu, F., Wang, K.L., Zhang, D., and Zhou, C., Noise in carbon nanotube field effect transistor, Applied Physics Letters, 2006, 89 (6), 63116-1 – 63116-3.
Khitun, A., and Wang, K.L., On logic circuits with spin wave bus, Journal of Nanoelectronics and Optoelectronics, 2006, 1 (1), 71 – 73.
Kwon, Y.H., Kang, T.W., Park, C.J., Cho, H.Y., Kim, T.W., Lee, J.Y., Wang, K.L., Kim, B.O., Kim, S.M., and Cho, Y.-H., Optical Properties and Deep Levels in Annealed Si1-xMnx Bulk Materials, Solid State Communications, 2006, 140 (1), 14 – 17.
Lee, J., Kim, H., Bao, M., and Wang, K.L., Pattern Size Dependence of Si1-xGex Epitaxial Growth for High Mobility Device Applications, Thin Solid Films, 2006, 508 (1-2), 10 – 13.
Liu, F., Wang, K.L., Zhang, D., and Zhou, C., Random telegraph signals and noise behaviors in carbon nanotube transistors, Applied Physics Letters, 2006, 89, 243101-1 – 243101-3.
X Singh, K., Pandey, R., Wang, X., Lake, R., Ozkan, C.,Wang, K.L., and Ozkan, M, SWNT-PNA-SWNT Conjugates: Synthesis, Characterization and Modeling, Carbon, 2006, 44, 1730 – 17539.
Liu, J.L., Yang, Z. and Wang, K.L. , Sb Surfactant-mediated SiGe Graded Layers for Ge Photodiodes Integrated on Si, Journal of Applied Physics, 2006, 99 (2), 024504-1 – 024504-8.
Bruque, N.A., Alam, K., Pandey, R.R., Lake, R., Lewis, J.P., Wang, X., Liu, F., Ozkan, C.S., Ozkan, M. and Wang, K.L., Self-Assembled Carbon Nanotubes for Electronic Circuit and Device Applications, Journal of Nanoelectronics and Optoelectronics, 2006, 1 (1), 74 – 81.
Pan, G.Z., Ostroumov, R.P., Ren, L.P., Lian, Y.G., and Wang, K.L., Silicon Light Emission From Boron Implant-induced Defect Engineering, Journal of Non-Crystalline Solids,, 2006, 352 (23-25), 2506 – 2509.
Lee, J., Chang, M.N., and Wang, K.L., Size Dependence of Hall Mobility and Dislocation Density in Ge Heteroepitaxial Layers Grown by MBE on a SiO2 Patterned Si Template, Microelectronics Journal, 2006, 37 (12), 1523 – 1527.
Liu, F., Wang, K.L. ,Li, C., and Zhou, C., Study of Random Telegraph Signals in Single-Walled Carbon Nanotube Field Effect Transistors, IEEE Transaction on Nanotechnology, 2006, 5 (5), 441 – 445.
Zhao, Z.M., Yoon, T.S., Feng, W., Li, B.Y., Kim, J.H., Liu, J., Hulko, O., Xie, Y.H., Kim, H.M., Kim, K.B., Kim, H.J., Wang, K.L., Ratsch, C., Caflisch, R., Ryu, D.Y., and Russell, T.P., The Challenges in Guided Self-assembly of Ge and InAs Quantum Dots on Si, Thin Solid Films, 2006, 508 (1-2), 195 – 199 .
Choi, D.S., Balandin, A.A., Leung, M.S., Stupian, G.W., Presser, N., Chung, S.W., Heath, J.R., Khitun, A. and Wang, K.L., Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks, Applied Physics Letter, 2006, 89, 141503.
Liu, F. Bao, M. Wang, K. L. Liu, X. Li, C. Zhou, C., Determination of the small band gap of carbon nanotubes using the ambipolar random telegraph signal, Nano Lett, 2005, 5 (7), 1333-6.
S. Tong, J.Y. Lee, H.J. Kim, F. Liu, K.L. Wang., Ge dot mid-infrared photodetectors, Optical Materials, 2005, 27, 1097-1100.
F. Liu, M. Bao, C. Li, C W Zhou, K. L. Wang., Giant random telegraph signals in the carbon nanotubes as single defect probe, Applied Physics Letters, 2005, 86, 163102-1-163102-3.
F. Liu, M. Bao, C. Li, C W Zhou, K. L. Wang., One-dimensional transport of In2O3 nanowires, Applied Physics Letters, 2005, 86, 213101-1~213101-3.
K.L. Wang, S. Tong, H.J. Kim., Properties and applications of SiGe nanodots, Materials Science in Semiconductor Processing, 2005, 8, 289-399.
M. Bao, F. Liu, and F. Baron and K.L. Wang., Tunneling spectroscopy of metal-oxide-semiconductor field-effect transistor at low temperature, Applied Physics Letters, 2005, 86 (24), 242104-1.
T. Suligoj, H. Liu, J.K.O. Sin, K. Tsui, R. Chu, K.J. Chen, O. Biljanovic, K.L. Wang., A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs, Solid State Electronics, 2004, 48 (10-11), 2047-50.
Y. Zhang, F.A. Baron, Z. Krivokapic, K.L. Wang., Complementary single-electron/hole action of nanoscale SOI CMOS transistors, IEEE Electron Device Letters, 2004, 25 (7), 492-494.
F.A. Baron, Y. Zhang, M. Bao, R. Li, J. Li and K.L. Wang, Effect on magnetic field on random telegraph noise in the source current of p-channel metal-oxide-semiconductor field-effect-transistors, Applied Physics Letters, 2003, 83 (4), 710-712.
T. Suligoj, M. Koricic, P. Biljanovic and K.L. Wang, Fabrication of horizontal current bipolar transistor (HCBT), IEEE Transactions on Electron Devices, 2003, 50 (7), 1645-1651.
T. Suligoj, M. Koricic, P. Biljanovic and K.L. Wang, Fabrication of horizontal current bipolar transistor (HCBT), IEEE Transactions on Electron Devices, 2003, 50 (7), 1645-1651.
F.A. Baron, A.A. Kiselev, H.D. Robinson, K.W. Kim, K.L. Wang and E. Yablonovitch, Manipulating the L-valley electron g factor in Si-Ge heterostructures, Physical Review B-Condensed Matter, 2003, 68 (19), 195306-1-10.
X. Guo, G.D. Shen, G.H. Wang, and K.L. Wang, Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode, Sci China Series E, 2003, 46 (2), 204-208.
S. Lee, Y.S. Shim, H.Y. Cho, D.Y. Kim, T.W. Kang and K.L. Wang, Optical and electrical properties of Si nanocrystals embedded in SiO2 layers, Japanese Journal of Applied Physics 1, 2003, 42 (12), 7180-7183.
Z. Yang, Y. Shi, J.L. Liu, L. Bo, Z.X. Huang, L. Pu, Y.D. Zheng and K.L. Wang, Strain and phonon confinement in self-assembled Ge quantum dot superlattices, Chinese Physics Letters, 2003, 20 (11), 2001-2003.
G Jin, J.L. Liu and K.L. Wang, Temperature effect on the formation of uniform self-assembled Ge dots, Applied Physics Letters, 2003, 83 (14), 2847-2849.
Wang, K. L., Issues of nanoelectronics: a possible roadmap, J Nanosci Nanotechnol, 2002, 2 (3-4), 235-66.